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Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD

Jadhavar, Ashok, Pawbake, Amit, Waykar, Ravindra, Waman, Vaishali, Rondiya, Sachin, Shinde, Omkar, Kulkarni, Rupali, Rokade, Avinash, Bhorde, Ajinkya, Funde, Adinath, Patil, Dinkar, Pathan, Habib and Jadkar, Sandesh 2016. Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD. Journal of Materials Science: Materials in Electronics 27 (12) , pp. 12365-12373. 10.1007/s10854-016-5024-1

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Abstract

We report synthesis of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by using conventional plasma enhanced chemical vapor deposition (PE-CVD) system from gas mixture of pure silane (SiH4) and hydrogen (H2). We investigated the effect of RF power on structural, optical and electrical properties using various characterization techniques including Raman spectroscopy, FTIR spectroscopy, UV–visible spectroscopy etc. Low angle XRD and Raman spectroscopy analysis revealed that the RF power in PE-CVD is a critical process parameter to induce nanocrystallization in Si:H films. The FTIR spectroscopy analysis results indicate that with increase in RF power the predominant hydrogen bonding in films shifts from Si–H to Si–H2 and (Si–H2)n bonded species bonded species. However, the bonded hydrogen content didn’t show particular trend with change in RF power. The UV–visible spectroscopy analysis shows that the band tail width (E04–ETauc) with increase in RF power. The defect density and Urbach energy also increases with increase in RF power. The highest dark conductivity (and lowest charge carrier activation energy) was obtained for the film deposited at RF power of 125 W indicating that 125 W is optimized RF power of our PE-CVD unit. At this optimized RF power nc-Si:H films with crystallite size ~3.7 nm having good degree of crystallinity (~86.7 %) and high band gap (ETauc ~ 2.01 eV and E04 ~ 2.58 eV) were obtained with a low hydrogen content (6.2 at.%) at moderately high deposition rate (0.24 nm/s).

Item Type: Article
Date Type: Publication
Status: Published
Schools: Chemistry
Publisher: Springer Verlag (Germany)
ISSN: 0957-4522
Date of Acceptance: 18 May 2016
Last Modified: 14 Jul 2020 14:15
URI: http://orca-mwe.cf.ac.uk/id/eprint/133264

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