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Room-temperature quantum emitter in aluminum nitride

Bishop, Samuel, Hadden, John, Alzahrani, Faris, Hekmati, Reza, Huffaker, Diana, Langbein, Wolfgang and Bennett, Anthony 2020. Room-temperature quantum emitter in aluminum nitride. ACS Photonics 10.1021/acsphotonics.0c00528

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Abstract

A device that is able to produce single photons is a 5 fundamental building block for a number of quantum technologies. 6 Significant progress has been made in engineering quantum emission in 7 the solid state, for instance, using semiconductor quantum dots as well 8 as defect sites in bulk and two-dimensional materials. Here we report 9 the discovery of a room-temperature quantum emitter embedded deep 10 within the band gap of aluminum nitride (AlN). Using spectral, 11 polarization, and photon-counting time-resolved measurements we 12 demonstrate bright (>105 counts s−1), pure (g2(0) < 0.2), and polarized 13 room-temperature quantum light emission from color centers in this 14 commercially important semiconductor.

Item Type: Article
Date Type: Published Online
Status: In Press
Schools: Physics and Astronomy
Engineering
Subjects: Q Science > QC Physics
Publisher: American Chemical Society
ISSN: 2330-4022
Funders: EPSRC, Royal Society, Ser Cymru -Welsh Government
Date of First Compliant Deposit: 15 June 2020
Date of Acceptance: 11 June 2020
Last Modified: 02 Jul 2020 10:45
URI: http://orca-mwe.cf.ac.uk/id/eprint/132408

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