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Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon

Allford, Craig, Li, Zhibo, Shutts, Samuel, Shi, B., Luo, W., Lau, Kei May and Smowton, Peter 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.

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Abstract

Broad-area InAs quantum dot lasers and segmented contact devices have been fabricated using monolithically grown InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. The device optoelectronic properties, optical gain and absorption have been studied and compared to structures with a nominally identical active region, grown on a native indium phosphide substrate.

Item Type: Conference or Workshop Item (Paper)
Status: In Press
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Funders: EPSRC
Date of First Compliant Deposit: 6 April 2020
Date of Acceptance: 6 September 2019
Last Modified: 31 May 2020 16:25
URI: http://orca-mwe.cf.ac.uk/id/eprint/130832

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