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Scaling of pHEMTs to Decanano Dimensions

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. 2001. Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13 (1-4) , pp. 435-439. 10.1155/2001/19759

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Abstract

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

Item Type: Article
Status: Published
Schools: Engineering
Publisher: Hindawi Publishing Corporation
ISSN: 1065-514X
Last Modified: 20 May 2019 10:30
URI: http://orca-mwe.cf.ac.uk/id/eprint/122564

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