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Modelling of InP HEMTs with high indium content channels

KaIna, K., Elgaid, K., Thayne, I. and Asenov, A. 2005. Modelling of InP HEMTs with high indium content channels. Presented at: International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, 8-12 May 2005. International Conference on Indium Phosphide and Related Materials, 2005. IEEE, pp. 192-195. 10.1109/ICIPRM.2005.1517454

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Abstract

Performance of sub-100 nm InP HEMTs with various indium contents in the channel is studied using an ensemble Monte Carlo device simulator. A detail insight into the non-equilibrium electron transport in the InGaAs channel is reported.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 0780388917
Last Modified: 16 Mar 2020 12:45
URI: http://orca-mwe.cf.ac.uk/id/eprint/122554

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