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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Raj, Vidur, Sibele dos Santos, Tâmara, Rougieux, Fiacre, Vora, Kaushal, Lysevych, Mykhaylo, Fu, Lan, Mokkapati, Sudha, Tan, Hark Hoe and Jagadish, Chennupati 2018. Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer. Journal of Physics D: Applied Physics 51 (39) , 395301. 10.1088/1361-6463/aad7e3

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According to the Shockley–Queisser limit, the maximum achievable efficiency for a single junction solar cell is ~33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2%  ±  0.5%, that is  >25% below the standard Shockley–Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p+ InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows that the use of a thin ZnO layer improves passivation of the underlying i-InP layer and provides electron selectivity leading to significantly higher efficiency when compared to their n+/i/p+ homojunction counterpart. As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p+ InP substrate and achieved an open-circuit voltage (V oc) and efficiency as high as 819 mV and 18.12%, respectively, along with ~90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible. This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be particularly useful when p- and n-doping are challenging as in the case of III–V nanostructures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: IOP Publishing
ISSN: 0022-3727
Date of First Compliant Deposit: 28 September 2018
Date of Acceptance: 3 August 2018
Last Modified: 11 Oct 2018 13:43

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