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Quantum confinement in oxide heterostructures: room-temperature intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells

Ortmann, John Elliott, Nookala, Nishant, He, Qian, Gao, Lingyuan, Lin, Chungwei, Posadas, Agham, Borisevich, Albina Y., Belkin, Mikhail A. and Demkov, Alexander A. 2018. Quantum confinement in oxide heterostructures: room-temperature intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells. ACS Nano 12 (8) , pp. 7682-7689. 10.1021/acsnano.8b01293

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Abstract

The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO3/LaAlO3 (STO/LAO) system has been studied extensively in the hopes of using the interfacial 2-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Cardiff Catalysis Institute (CCI)
Chemistry
Publisher: American Chemical Society
ISSN: 1936-0851
Date of First Compliant Deposit: 31 July 2018
Date of Acceptance: 25 July 2018
Last Modified: 20 Oct 2019 08:09
URI: http://orca-mwe.cf.ac.uk/id/eprint/113806

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