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The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies

Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing,

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Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: World Scientific Publishing
ISBN: 9789810219758
Last Modified: 04 Jun 2017 02:38
URI: http://orca-mwe.cf.ac.uk/id/eprint/11247

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