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Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field

Sobiesierski, Zbigniew, Westwood, David I. and Elliott, Martin 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56 (23) , pp. 15277-15281. 10.1103/PhysRevB.56.15277

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Abstract

Reflectance anisotropy spectroscopy (RAS) has been employed in situ to investigate the overlayer growth of GaAs onto submonolayer to one monolayer coverages of Si δ layers deposited on the GaAs(001)-c(4×4) surface. The intensity of RAS features, thought to arise from the linear electro-optic (LEO) effect, is found to vary with both the number of atoms in the Si δ layer and the position of the δ plane from the GaAs surface. Self-consistent solutions to Poisson’s equation are made to calculate the electric field in the near-surface region of the samples. The results show a direct correlation between the LEO intensity and the surface field averaged over the penetration depth of the incident radiation, in confirmation of the LEO model.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Lifelong Learning
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 04 Nov 2017 22:42
URI: http://orca-mwe.cf.ac.uk/id/eprint/11223

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