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Evidence for hydrogen accumulation at strained layer heterojunctions

Sobiesierski, Zbigniew and Clegg, J. B. 1993. Evidence for hydrogen accumulation at strained layer heterojunctions. Applied Physics Letters 63 (7) , pp. 926-928. 10.1063/1.110775

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Abstract

The incorporation of hydrogen into strained InxGa1−xAs/GaAs quantum wells results in the formation of shallow, H‐related radiative states which compete with, and quench, the intrinsic band‐to‐band luminescence. By comparing the photoluminescence data obtained from hydrogenated material with secondary ion mass spectroscopy profiles from deuterated material, it is possible to deduce that the H‐related radiative states are associated with H which is accumulated at the well interfaces.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: INDIUM ARSENIDES, GALLIUM ARSENIDES, QUANTUM WELL STRUCTURES, INTERNAL STRAINS, PHOTOLUMINESCENCE, HYDROGEN ADDITIONS, DEFECT STATES, PASSIVATION, SIMS, INTERFACE STATES
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 02:37
URI: http://orca-mwe.cf.ac.uk/id/eprint/11216

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