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The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies

Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P

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Abstract

Si-doping and variable growth temperature studies have been performed in the on-axis homoepitaxial GaAs(111)A, (111)B and (201) materials systems. These studies are compared with the already extensively characterized GaAs(100) orientation. It was demonstrated that the Si-doped n-type GaAs(111)B and (201) could be grown across the mid-1014 to 1018 cm-3 range, whereas the Si-doped GaAs(111)A was p-type and could be doped from ≌ 2×1015 to ≌ 5×1017 cm-3. The growth temperature studies revealed similar conducting/non-conducting transitions in the GaAs(111)A, (111)B and (201) specimens as observed for GaAs(100).

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0022-0248
Last Modified: 04 Jun 2017 02:37
URI: http://orca-mwe.cf.ac.uk/id/eprint/11215

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