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Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states

Sobiesierski, Zbigniew, Woolf, D. A. and Westwood, David I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12 (2) , pp. 261-265. 10.1016/0749-6036(92)90349-A

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Abstract

Photoluminescence (PL) measurements have been performed on strained InxGa1−xAs/GaAs (100) quantum well structures, as well as GaAs(100) and GaAs/Si (100) layers, subjected to post-growth hydrogenation. H incorporation leads to the observation of shallow H-related PL bands from the InxGa1−xAs wells. For x = 0.09, these radiative states exhibit binding energies which vary from 22 meV (40Å well) to 15 meV (160Å well). Increasing the In content, to x = 0.16 and x = 0.20, results in a decrease of the effective binding energy observed for each shallow H-related PL transition. The dependence of H volume incorporation on both sample quality and temperature during implantation have been investigated by comparing material hydrogenated at 150°C and 300°C, using H doses of 1017 and 5×1018 ions/cm2.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0749-6036
Last Modified: 04 Jun 2017 02:37
URI: http://orca-mwe.cf.ac.uk/id/eprint/11213

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