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Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices

Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, David, Uren, M.J., Martin, T. and Kuball, M. 2008. Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices. IEEE Electron Device Letters 29 (5) , pp. 416-418. 10.1109/LED.2008.919779

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Abstract

Time-resolved Raman thermography, with a temporal resolution of , was used to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices). Heat diffusion from the device active region into the substrate and within the devices was studied. Delays in the thermal response with respect to the electrical pulse were determined at different locations in the devices. Quasi-adiabatic heating of the AlGaN/GaN devices is illustrated within the first of device operation. The temperature of devices on SiC was found to reach of the dc temperature when operated with -long electrical pulses.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Last Modified: 23 Mar 2018 12:37
URI: http://orca-mwe.cf.ac.uk/id/eprint/109518

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