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All-GaN-integrated cascode heterojunction field effect transistors

Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Miaja, Pablo F., Zaidi, Zaffar H., Qian, Hongtu, Wallis, David J., Forsyth, Andrew J., Humphreys, Colin J. and Houston, Peter A. 2017. All-GaN-integrated cascode heterojunction field effect transistors. IEEE Transactions on Power Electronics 32 (11) , pp. 8743-8750. 10.1109/TPEL.2016.2643499

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Abstract

All-GaN-integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal-insulator-semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and depletion mode parts. The optimization was achieved by shifting the threshold voltage of the depletion mode section to a more negative value with the addition of a dielectric layer under the gate. The switching performance of the cascode was compared to the equivalent GaN enhancement-mode-only device by measuring the hard switching speed at 200 V under an inductive load in a double pulse tester. For the first time, we demonstrate the switching speed advantage of the cascode over equivalent GaN enhancement-mode-only devices, due to the reduced Miller-effect and the unique switching mechanisms. These observations suggest that practical power switches at high power and high switching frequency will benefit as part of an integrated cascode configuration.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: This work is licensed under a Creative Commons Attribution 3.0 License.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0885-8993
Date of First Compliant Deposit: 8 March 2018
Date of Acceptance: 12 December 2016
Last Modified: 01 Dec 2020 10:45
URI: http://orca-mwe.cf.ac.uk/id/eprint/109514

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