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X-Band GaN SPDT MMIC with over 25 watt linear power handling

Janssen, Jochem, Hilton, Keith P., Maclean, Jessica O., Wallis, David J., Powell, Jeff, Uren, Michael, Martin, Trevor, van Heijningen, Marc and van Vliet, Frank 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008, Amsterdam, The Netherlands, 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE, 10.1109/EMICC.2008.4772261

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Abstract

Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore Gallium Nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9782874870071
Last Modified: 19 Mar 2018 14:49
URI: http://orca-mwe.cf.ac.uk/id/eprint/109512

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