Subthreshold Mobility in AlGaN/GaN HEMTs

Waller, William M., Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J., Guiney, Ivor, Humphreys, Colin J., Pandey, Saurabh, Sonsky, Jan and Kuball, Martin 2016. Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 63 (5) , pp. 1861-1865. 10.1109/TED.2016.2542588

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Abstract

Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×10 10 cm -2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ~50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0018-9383
Date of Acceptance:	14 March 2016
Last Modified:	11 May 2020 09:00
URI:	http://orca-mwe.cf.ac.uk/id/eprint/109507

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