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Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy

Kuball, M., Riedel, G. J., Pomeroy, J. W., Sarua, A., Uren, M. J., Martin, T., Hilton, K. P., Maclean, J. O. and Wallis, David 2007. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Device Letters 28 (2) , pp. 86-89. 10.1109/LED.2006.889215

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Abstract

We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of∼10 and ∼140 μs for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Last Modified: 23 Mar 2018 12:05
URI: http://orca-mwe.cf.ac.uk/id/eprint/109498

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