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Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers

Riedel, G. J., Pomeroy, J. W., Hilton, K.P., Maclean, J.O., Wallis, David J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J. and Kuball, M. 2009. Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers. IEEE Electron Device Letters 30 (2) , pp. 103-106. 10.1109/LED.2008.2010340

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Abstract

Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlN-NL reduces NL TBR by 25%, resulting in ~10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Last Modified: 19 Mar 2018 14:40
URI: http://orca-mwe.cf.ac.uk/id/eprint/109492

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