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High-performance InSb based quantum well field effect transistors for low-power dissipation applications

Ashley, T., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H, Wallis, David J. and Webber, P. J. 2010. High-performance InSb based quantum well field effect transistors for low-power dissipation applications. Presented at: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA, 7-9 December 2009. 2009 IEEE International Electron Devices Meeting (IEDM). IEEE, p. 1. 10.1109/IEDM.2009.5424207

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Abstract

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of more than 250 GHz and power gain cut-off frequency (fmax) of 500 GHz. Outline designs confirm the potential for multi-stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: IEEE
ISBN: 9781424456390
ISSN: 0163-1918
Last Modified: 19 Mar 2018 14:32
URI: http://orca-mwe.cf.ac.uk/id/eprint/109490

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