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Designing single GaAs nanowire lasers

Saxena, D., Mokkapati, Sudha, Tan, H.H. and Jagadish, C. 2012. Designing single GaAs nanowire lasers. Presented at: COMMAD 2012, Melbourne, Australia, 12-14 December 2012. COMMAD 2012 Conference on Optoelectronic and Microelectronic Materials & Devices. IEEE, p. 101. 10.1109/COMMAD.2012.6472380

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Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Uncontrolled Keywords: GaAs, nanowire lasers, threshold gain, nanowire guided modes, nanowire diameter, nanowire length, material gain, carrier density, microscopic gain model, laser power, optical pumping, optimal structures
Publisher: IEEE
ISBN: 9781467330456
ISSN: 1097-2137
Last Modified: 23 Jan 2020 04:18

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