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Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

Mokkapati, Sudha, Tan, H.H. and Jagadish, C. 2006. Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy. IEEE Photonics Technology Letters 18 (15) , pp. 1648-1650. 10.1109/LPT.2006.879531

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Abstract

Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Selective-area epitaxy is used to simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices. The losses in the active and passive sections of the integrated devices are 6 and 3 cm -1, respectively. Very low losses in the waveguide section are due to a large difference of 200meV in the bandgap energies of the selectively grown QDs and QWs.

Item Type: Article
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: semiconductor lasers, integrated optoelectronics, quantum dots (QDs), selective-area epitaxy (SAE)
ISSN: 1041-1135
Last Modified: 25 Jan 2018 11:40
URI: http://orca-mwe.cf.ac.uk/id/eprint/108460

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