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Carrier dynamics in p-type InGaAs/GaAs quantum dots

Wen, X.M., Dao, L. V., Davis, J. A., Hannaford, P., Mokkapati, Sudha, Tan, H. H. and Jagadish, C. 2007. Carrier dynamics in p-type InGaAs/GaAs quantum dots. Journal of Materials Science: Materials in Electronics 18 (S1) , pp. 363-365. 10.1007/s10854-007-9241-5

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Abstract

In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

Item Type: Article
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
ISSN: 0957-4522
Last Modified: 25 Jan 2018 09:56
URI: http://orca-mwe.cf.ac.uk/id/eprint/108451

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