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Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing

Mokkapati, Sudha, Du, Sichao, Buda, M., Fu, L., Tan, H. H. and Jagadish, C. 2007. Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Nanoscale Research Letters 2 (11) , pp. 550-553. 10.1007/s11671-007-9097-x

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Abstract

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

Item Type: Article
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantum dot lasers, Ion implantation
Publisher: Springer
ISSN: 1931-7573
Last Modified: 24 Jan 2018 12:04
URI: http://orca-mwe.cf.ac.uk/id/eprint/108432

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