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Mechanism of hot electron electroluminescence in GaN-based transistors

Brazzini, Tommaso, Sun, Huarui, Sarti, Francesco, Pomeroy, James W., Hodges, Chris, Gurioli, Massimo, Vinattieri, Anna, Uren, Michael J. and Kuball, Martin 2016. Mechanism of hot electron electroluminescence in GaN-based transistors. Journal of Physics D: Applied Physics 49 (43) , 435101. 10.1088/0022-3727/49/43/435101

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Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
ISSN: 0022-3727
Date of First Compliant Deposit: 6 November 2017
Date of Acceptance: 13 September 2017
Last Modified: 10 Nov 2017 14:57

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