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Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process

Reddy, N Parvathala, Naureen, Shagufta, Mokkapati, Sudha, Vora, Kaushal, Shahid, Naeem, Karouta, Fouad, Tan, Hark Hoe and Jagadish, Chennupati 2016. Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process. Nanotechnology 27 (6) , 065304. 10.1088/0957-4484/27/6/065304

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Abstract

We report the fabrication of GaN nanopillar arrays with good structural uniformity using the topdown approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of antireflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the epilayer. The measured quantum efficiency of the nanopillars is comparable to that of an epitaxially grown GaN epilayer. Keywords: top-down process, GaN nanopillars, photoluminescence, quantum efficiency (Some figures may appear in colour only in the online journal)

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOPScience
ISSN: 09574484
Date of Acceptance: 17 November 2015
Last Modified: 20 May 2019 14:07
URI: http://orca-mwe.cf.ac.uk/id/eprint/101271

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