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Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Nguyen, Hieu T., Rougieux, Fiacre E., Yan, Di, Wan, Yimao, Mokkapati, Sudha, de Nicolas, Silvia Martin, Seif, Johannes Peter, De Wolf, Stefaan and Macdonald, Daniel 2016. Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy. Solar Energy Materials and Solar Cells 145 (3) , pp. 403-412. 10.1016/j.solmat.2015.11.006

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Abstract

We report and explain the photoluminescence (PL) spectra from crystalline silicon (c-Si) wafers passivated by hydrogenated amorphous silicon (a-Si:H) films under various measurement conditions, utilizing the different absorption coefficients and radiative recombination mechanisms in c-Si and a-Si:H. By comparison with the luminescence properties of a-Si:H, we also demonstrate that SiNx films deposited under certain silicon-rich conditions yield luminescence spectra similar to those of a-Si:H, indicating the presence of an a-Si:H-like phase in the SiNx films. This causes a reduction in the blue response of the solar cells via parasitic absorption. In addition, with the ability to detect the specific emission from heavily-doped silicon via band-gap narrowing effects, we can unambiguously separate individual spectral PL signatures of three different layers in a single substrate: the SiNx passivation films, the diffused layers, and the underlying c-Si substrate. Finally, we apply this technique to evaluate parasitic absorption in the passivation films, and the doping density of the diffused layers on different finished solar cells, highlighting the value of this nondestructive c

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0927-0248
Date of Acceptance: 2 November 2015
Last Modified: 09 Oct 2017 10:07
URI: http://orca-mwe.cf.ac.uk/id/eprint/101245

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