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Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating

Zhong, Zhiqin, Li, Ziyuan, Gao, Qian, Li, Zhe, Peng, Kun, Li, Li, Mokkapati, Sudha, Vora, Kaushal, Wu, Jiang, Zhang, Guojun, Wang, Zhiming, Fu, Lan, Tan, Hark Hoe and Jagadish, Chennupati 2016. Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating. Nano Energy 28 , pp. 106-114. 10.1016/j.nanoen.2016.08.032

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In this work we demonstrate single axial p-i-n junction InP nanowire (NW) solar cells grown by selective-area metal organic vapor phase epitaxy (SA-MOVPE) technique. A power conversion efficiency of up to 6.5% was realized in the single NW solar cell (horizontally lying on substrate) without any surface passivation. Electron beam induced current (EBIC) and photocurrent mapping were performed to investigate the electrical properties of the NW solar cells and their influence on device performance, which are essential for an in-depth understanding of the design requirements for NW solar cells. A further conformal SiNx layer was deposited on the single NW solar cell devices by plasma-enhanced chemical vapor deposition (PECVD). Overall efficiency improvement has been obtained in the SiNx-coated devices with a remarkable up to 62% increase to a peak efficiency of 10.5%, which to our knowledge is the highest efficiency reported for horizontal single NW solar cells. This has been attributed to an enhanced optical antenna effect and effective surface passivation due to SiNx coating, as respectively confirmed by numerical simulation and time-resolved photoluminescence (TRPL) measurements. Our work demonstrates that dielectric coating is a promising simple approach to achieve high performance III–V NW solar cells.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: III–V semiconductors; Nanowire solar cells; Axial junction; Selective-area MOVPE; EBIC; Dielectric coating
Publisher: Elsevier
Date of Acceptance: 11 August 2016
Last Modified: 23 Jan 2020 04:14

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